FDMS3664S

onsemi
512-FDMS3664S
FDMS3664S

Mfr.:

Description:
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET

ECAD Model:
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In Stock: 14.108

Stock:
14.108 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,81 € 1,81 €
1,16 € 11,60 €
0,783 € 78,30 €
0,624 € 312,00 €
0,553 € 553,00 €
Full Reel (Order in multiples of 3000)
0,553 € 1.659,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
Power-56-8
N-Channel
2 Channel
30 V
13 A, 25 A
8 mOhms, 2.6 mOhms
- 20 V, - 12 V, 12 V, 20 V
1.1 V
29 nC, 52 nC
- 55 C
+ 150 C
2.2 W, 2.5 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Product Type: MOSFETs
Series: FDMS3664S
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Unit Weight: 171 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

PowerTrench® MOSFETs

onsemi PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

FDMS366xS PowerTrench® Power Stage MOSFETs

onsemi's FDMS366xS PowerTrench® Power Stage MOSFETs include two specialized N-Channel MOSFETs in a dual PQFN package. Low inductance packaging shortens rise/fall times, resulting in lower switching losses. Integration of the two MOSFETs enables optimum layout for lower circuit inductance and reduced switch node ringing. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.