FDMC86116LZ

onsemi
512-FDMC86116LZ
FDMC86116LZ

Mfr.:

Description:
MOSFETs 100V/20V w/Zener NCH PowerTrench MOSFET

Datasheet:
ECAD Model:
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Learn more about onsemi FDMC86116LZ

In Stock: 6.713

Stock:
6.713 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
1,36 € 1,36 €
0,857 € 8,57 €
0,572 € 57,20 €
0,451 € 225,50 €
0,41 € 410,00 €
Full Reel (Order in multiples of 3000)
0,372 € 1.116,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
Power-33-8
N-Channel
1 Channel
100 V
3.3 A
103 mOhms
- 20 V, 20 V
1 V
6 nC
- 55 C
+ 150 C
19 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Product Type: MOSFETs
Series: FDMC86116LZ
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 180 mg
Products found:
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

FDMC8x N-Ch Gate PowerTrench® MOSFETs

onsemi FDMC8x N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance. FDMC8x MOSFETs are designed for use in DC-DC conversion applications.

PowerTrench® MOSFETs

onsemi PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and RDS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low RDS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low RDS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering

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