FDMC8200S

onsemi
512-FDMC8200S
FDMC8200S

Mfr.:

Description:
MOSFETs 30V Dual N-Channel PowerTrench MOSFET

ECAD Model:
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In Stock: 3.945

Stock:
3.945 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,14 € 1,14 €
0,717 € 7,17 €
0,482 € 48,20 €
0,377 € 188,50 €
0,342 € 342,00 €
Full Reel (Order in multiples of 3000)
0,298 € 894,00 €
0,276 € 1.656,00 €
0,27 € 2.430,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
Power-33-8
N-Channel
2 Channel
30 V
18 A
20 mOhms
- 20 V, 20 V
1 V
7.5 nC, 15.7 nC
- 55 C
+ 150 C
2.5 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Dual
Forward Transconductance - Min: 43 S
Product Type: MOSFETs
Series: FDMC8200S
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Unit Weight: 186 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
ECCN:
EAR99

FDMC8x N-Ch Gate PowerTrench® MOSFETs

onsemi FDMC8x N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance. FDMC8x MOSFETs are designed for use in DC-DC conversion applications.

PowerTrench® MOSFETs

onsemi PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

FDMS36xxS Power Stage Dual Asymmetric MOSFETs

onsemi FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide a high output current capability in a 5mm x 6mm dual MOSFET solution. These modules incorporate control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET are designed to deliver optimal power efficiency for output currents up to 30A. These onsemi devices are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.