FDMC8026S

512-FDMC8026S
FDMC8026S

Mfr.:

Description:
MOSFETs 30V N-Channel PowerTrench SyncFET

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 3.000

Stock:
3.000 Can Dispatch Immediately
Quantities greater than 3000 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,43 € 1,43 €
0,912 € 9,12 €
0,604 € 60,40 €
0,495 € 247,50 €
0,469 € 469,00 €
Full Reel (Order in multiples of 3000)
0,398 € 1.194,00 €

Similar Product

Nexperia PXN4R7-30QLJ
Nexperia
MOSFETs The factory is currently not accepting orders for this product.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
Power-33-8
N-Channel
1 Channel
30 V
21 A
4.4 mOhms
- 20 V, 20 V
1.2 V
37 nC
- 55 C
+ 150 C
36 W
Enhancement
PowerTrench SyncFET
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Fall Time: 4 nS
Forward Transconductance - Min: 106 S
Product Type: MOSFETs
Rise Time: 5 nS
Series: FDMC8026S
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 nS
Unit Weight: 165,330 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
ECCN:
EAR99

Fairchild Power Trench™ MOSFETs

Fairchild's PowerTrench® MOSFETs are optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. These PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing Fairchild's advanced technology, the FOM (figure of merit) of these devices is 66 percent lower than that of the previous generation. The soft body diode performance of these PowerTrench® MOSFETs are able to eliminate snubber circuit or replace higher voltage rating - MOSFETs that need this circuit because it can minimize the undesirable voltage spikes in synchronous rectification. These Fairchild PowerTrench® MOSFETs provide designers the opportunity to significantly increase system efficiency and power density in synchronous rectification applications.
Learn More

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and RDS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low RDS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More


ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low RDS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering