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FDD86110

Name: onsemi FDD86110
Brand: onsemi
SKU: 512-FDD86110
Price: 3.3 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

512-FDD86110

Mfr. No:

FDD86110

Mfr.:

onsemi

Description:

MOSFETs 100V N-Channel PowerTrench MOSFET

Datasheet:

FDD86110 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi FDD86110

In Stock: 314

Stock:: 314

Can Dispatch Immediately

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On Order:: 2.500

Expected 6/15/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,30 €	3,30 €
	2,16 €	21,60 €
	1,51 €	151,00 €
	1,24 €	620,00 €
Full Reel (Order in multiples of 2500)
	1,15 €	2.875,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	12.5 A
Rds On - Drain-Source Resistance:	10.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	35 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	3.9 ns
Forward Transconductance - Min:	38 S
Product Type:	MOSFETs
Rise Time:	5.4 ns
Series:	FDD86110
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	330 mg

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Datasheet

FDD86110 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.