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FCP850N80Z

Name: onsemi FCP850N80Z
Brand: onsemi
SKU: 512-FCP850N80Z
Price: 3.09 EUR
Availability: InStock

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Mouser No:

512-FCP850N80Z

Mfr. No:

FCP850N80Z

Mfr.:

onsemi

Description:

MOSFETs 800V 8A NChn MOSFET SuperFET II, FRFET

Datasheet:

FCP850N80Z Datasheet (PDF)

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More Information

Learn more about onsemi FCP850N80Z

In Stock: 486

Stock:: 486 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,09 €	3,09 €
	2,02 €	20,20 €
	1,41 €	141,00 €
	1,15 €	575,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	850 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Tradename:	SuperFET II
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4.5 ns
Forward Transconductance - Min:	3.5 S
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	FCP850N80Z
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	2 g

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Datasheet

FCP850N80Z Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

SuperFET® II Power MOSFETs

onsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.