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FCP067N65S3

Name: onsemi FCP067N65S3
Brand: onsemi
SKU: 512-FCP067N65S3
Price: 6.53 EUR
Availability: InStock

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Mouser No:

512-FCP067N65S3

Mfr. No:

FCP067N65S3

Mfr.:

onsemi

Description:

MOSFETs 650V 44A N-Channel SuperFET MOSFET

Datasheet:

FCP067N65S3 Datasheet

ECAD Model:

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More Information

Learn more about onsemi FCP067N65S3

In Stock: 798

Stock:: 798

Can Dispatch Immediately

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On Order:: 800

Expected 7/3/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,53 €	6,53 €
	5,23 €	52,30 €
	4,23 €	423,00 €
	3,76 €	1.880,00 €
	3,33 €	3.330,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	44 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	78 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Tradename:	SuperFET III
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	52 ns
Series:	FCP067N65S3
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	89 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	2 g

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Datasheet

FCP067N65S3 Datasheet

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.