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4N38VM

Name: onsemi 4N38VM
Brand: onsemi
SKU: 512-4N38VM
Price: 0.6 EUR
Availability: InStock

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See Product Specifications

Mouser No:

512-4N38VM

Mfr. No:

4N38VM

Mfr.:

onsemi

Description:

Transistor Output Optocouplers 6PW HVCEO TR DIP VDE

Datasheet:

4N38VM Datasheet (PDF)

ECAD Model:

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Learn more about onsemi 4N38VM

In Stock: 1.940

Stock:: 1.940 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,602 €	0,60 €
	0,418 €	4,18 €
	0,305 €	30,50 €
	0,255 €	127,50 €
	0,237 €	237,00 €
	0,224 €	448,00 €
	0,188 €	940,00 €
	0,181 €	1.810,00 €
	0,175 €	4.375,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Transistor Output Optocouplers
RoHS:
Mounting Style:	Through Hole
Package/Case:	DIP-6
Number of Channels:	1 Channel
Isolation Voltage:	4170 Vrms
Output Type:	NPN Phototransistor
Current Transfer Ratio - Min:	20 %
If - Forward Current:	80 mA
Vf - Forward Voltage:	1.5 V
Maximum Collector Emitter Voltage:	80 V
Maximum Collector Current:	100 mA
Maximum Collector Emitter Saturation Voltage:	1 V
Vr - Reverse Voltage:	6 V
Pd - Power Dissipation:	420 mW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 100 C
Series:	4N38M
Packaging:	Bulk
Brand:	onsemi
Configuration:	1 Channel
Current Transfer Ratio:	20 %
Product Type:	Transistor Output Optocouplers
Factory Pack Quantity:	1000
Subcategory:	Optocouplers
Unit Weight:	400 mg

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Datasheet

4N38VM Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541490000
CNHTS:: 8541490000
CAHTS:: 8541490020
USHTS:: 8541498000
KRHTS:: 8541409029
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Thailand
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

4N38xM 6-Pin DIP Phototransistor Optocouplers

onsemi / Fairchild 4N38xM 6-Pin DIP High Voltage Phototransistor Optocouplers are designed as phototransistor-type optically coupled optoisolators. The 4N38xM series features a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. The devices have a UL 1577 safety and regulatory approval of 4,170VAC RMS for 1 minute and are DIN-EN/IEC60747-5-5 certified at 850V peak working insulation voltage.