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2N6491G

Name: onsemi 2N6491G
Brand: onsemi
SKU: 863-2N6491G
Price: 1.34 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

863-2N6491G

Mfr. No:

2N6491G

Mfr.:

onsemi

Datasheet:

ECAD Model:

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Stock:: 0

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On Order:: 900

Expected 7/3/2026

550

TBD
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	PNP
Configuration:	Single
Maximum DC Collector Current:	15 A
Collector- Emitter Voltage VCEO Max:	80 V
Collector- Base Voltage VCBO:	90 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	3.5 V
Pd - Power Dissipation:	1.8 W
Gain Bandwidth Product fT:	5 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Series:	2N6491
Packaging:	Tube
Brand:	onsemi
Continuous Collector Current:	15 A
DC Collector/Base Gain hFE Min:	20
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	50
Subcategory:	Transistors
Unit Weight:	6 g