C3M0160120J

Wolfspeed
941-C3M0160120J
C3M0160120J

Mfr.:

Description:
SiC MOSFETs SiC, MOSFET, 160mohm, 1200V, TO-263-7, Industrial

Datasheet:
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In Stock: 1.014

Stock:
1.014 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,28 € 6,28 €
3,38 € 33,80 €
3,10 € 310,00 €
2,99 € 1.495,00 €

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
17 A
208 mOhms
- 8 V, + 19 V
3.6 V
24 nC
- 55 C
+ 150 C
90 W
Enhancement
Brand: Wolfspeed
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 8 ns
Forward Transconductance - Min: 5.2 S
Moisture Sensitive: Yes
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 8 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 11 ns
Unit Weight: 2,387 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

1200V Silicon Carbide Power MOSFETs

Wolfspeed  1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

SiC MOSFETs C3M™ in TOLL Package

Wolfspeed SiC MOSFETs C3M™ in the TOLL Package offer a much lower on-state resistance temperature dependence than standard silicon MOSFETs. The MOSFETs feature superior switching speeds and low conduction loss, which is critical to achieving high efficiency at high power for next-generation power supplies. The SiC MOSFETs are optimized for high-performance power electronics applications, including enterprise, server, and telecom power supplies, electric vehicle charging, energy storage, and battery management systems.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

650V Silicon Carbide Power MOSFETs

Wolfspeed 650V Silicon Carbide Power MOSFETs offer low on-state resistances and switching losses for maximum efficiency and power density. The 650V MOSFETs are optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, Solar (PV) inverters, uninterruptible power supplies, and battery management systems. Compared with silicon, Wolfspeed 650V silicon carbide MOSFETs enable 75% lower switching losses, ½ the conduction losses, and 3x higher power density.

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