C3M0021120K

Wolfspeed
941-C3M0021120K
C3M0021120K

Mfr.:

Description:
SiC MOSFETs 1.2kV 21mOHMS G3 SiC MOSFET

ECAD Model:
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In Stock: 881

Stock:
881 Can Dispatch Immediately
Quantities greater than 881 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
15,11 € 15,11 €
10,14 € 101,40 €
10,13 € 1.215,60 €

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
100 A
28.8 mOhms
- 8 V, + 19 V
2.5 V
162 nC
- 40 C
+ 175 C
469 W
Enhancement
Brand: Wolfspeed
Configuration: Single
Fall Time: 14 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 33 ns
Series: C3M
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 57 ns
Typical Turn-On Delay Time: 29 ns
Unit Weight: 6 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

1200V Silicon Carbide Power MOSFETs

Wolfspeed  1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.