It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

C3M0021120D

Name: Wolfspeed C3M0021120D
Brand: Wolfspeed
SKU: 941-C3M0021120D
Price: 16.67 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

941-C3M0021120D

Mfr. No:

C3M0021120D

Mfr.:

Wolfspeed

Description:

SiC MOSFETs 1.2kV 21mOHMS G3 SiC MOSFET

Datasheet:

C3M0021120D Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Wolfspeed C3M0021120D

In Stock: 1.070

Stock:: 1.070 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	16,67 €	16,67 €
	11,46 €	114,60 €
	10,27 €	1.232,40 €
	9,70 €	4.947,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	28.8 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	160 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	469 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Fall Time:	25 ns
Forward Transconductance - Min:	35 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	27 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	72 ns
Typical Turn-On Delay Time:	142 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

C3M0021120D Datasheet

PCN

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

1200V Silicon Carbide Power MOSFETs

Wolfspeed 1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

SiC C3M MOSFETs

Wolfspeed SiC C3M MOSFETs enable higher switching frequencies and reduce inductor, capacitor, filter, and transformer component sizes. The Wolfspeed SiC C3M MOSFETs have higher system efficiency and reduced cooling requirements. The MOSFETs also increase power density and system switching frequency.