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W634GU6NB11I

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See Product Specifications

Mouser No:

454-W634GU6NB11I

Mfr. No:

W634GU6NB11I

Mfr.:

Winbond

Description:

DRAM 4Gb DDR3L 1.35V SDRAM, x16, 933MHz, Industrial Temp

Lifecycle:

Verify Status with Factory:

Lifecycle information is unclear. Obtain a quote to verify the availability of this part number from the manufacturer.

Datasheet:

W634GU6NB11I Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Winbond W634GU6NB11I

Availability

Stock:: Non-Stocked, Call To Request a Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Winbond
Product Category:	DRAM
Type:	SDRAM - DDR3L
Memory Size:	4 Gbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	933 MHz
Package/Case:	VFBGA-96
Organisation:	256 M x 16
Access Time:	20 ns
Supply Voltage - Min:	1.283 V
Supply Voltage - Max:	1.45 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 95 C
Series:	W634GU6NB
Brand:	Winbond
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	190
Subcategory:	Memory & Data Storage
Supply Current - Max:	205 mA

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Filter Document:

Datasheet

W634GU6NB11I Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-14 (PDF)

PCN

Compliance Codes

USHTS:: 8542320036
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

DRAM Product Portfolio

Winbond DRAM Product Portfolio consists of Mobile RAM and Specialty DRAM for consumer, communication, peripheral, industrial, and automobile markets. Specialty DRAM features high performance and a high speed for a complete solution. The SDR, DDR, DDR2, and DDR3 feature support for industrial and automotive applications with AEC-Q100, TS16949, ISO9001/14001, OHSAS18001 certificates. Winbond provides professional advice to KGD customers, including SiP package bonding and power/thermal, DRAM simulation, and wafer level on speed tests.