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SIHB155N60EF-GE3

Name: Vishay SIHB155N60EF-GE3
Brand: Vishay
SKU: 78-SIHB155N60EF-GE3
Price: 5.17 EUR
Availability: InStock

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Mouser No:

78-SIHB155N60EF-GE3

Mfr. No:

SIHB155N60EF-GE3

Mfr.:

Vishay

Datasheet:

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	159 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	179 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	9.2 S
Product Type:	MOSFETs
Rise Time:	27 ns
Series:	SIHB EF
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	N-Channel EF Series Power MOSFET
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	20 ns