It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SQJ422EP-T1_BE3

Name: Vishay SQJ422EP-T1_BE3
Brand: Vishay / Siliconix
SKU: 78-SQJ422EP-T1_BE3
Price: 2.07 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SQJ422EP-T1_BE3

Mfr. No:

SQJ422EP-T1_BE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET

Datasheet:

SQJ422EP-T1_BE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay / Siliconix SQJ422EP-T1_BE3

In Stock: 9.092

Stock:: 9.092 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,07 €	2,07 €
	1,33 €	13,30 €
	0,912 €	91,20 €
	0,722 €	361,00 €
	0,663 €	663,00 €
Full Reel (Order in multiples of 3000)
	0,617 €	1.851,00 €

Alternative Packaging

Mfr. Part No.:

SQJ422EP-T1_GE3

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

2,22 €

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	75 A
Rds On - Drain-Source Resistance:	4.3 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	100 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	SQJ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	SQJ422EP-T1_GE3
Unit Weight:	187 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
This part number has a BE3 suffix; however, it is the exact form, fit, 
and function of the part number with the GE3 suffix. The only 
difference is the country of origin.
Please contact a Mouser Technical Service Representative for further 
assistance 
5-0321-10

Filter Document:

Datasheet

SQJ422EP-T1_BE3 Datasheet

Models

Technical Resources

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SQJ Automotive MOSFETs

Vishay / Siliconix SQJ Automotive MOSFETs are TrenchFET^®Gen IV N-Channel 40V_DS power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% R_g and Unclamped Inductive Switching (UIS) tested with less-than 1 Q_gd/Q_gs ratio that optimizes the switching characteristics. The Vishay / Siliconix SQJ Automotive MOSFETs offer very low R_DS(on) and operate within the -55°C to 175°C temperature range. These automotive-grade MOSFETs are available in a PowerPAK^® SO-8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives and actuators, and battery management.