SQD100N02_3M5L4GE3

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Mouser No:

78-SQD100N023M5L4GE3

Mfr. No:

SQD100N02_3M5L4GE3

Mfr.:

Vishay / Siliconix

Lifecycle:

Obsolete

Datasheet:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	3.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	110 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	HK
Fall Time:	15 ns
Forward Transconductance - Min:	186 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	SQD
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	330 mg