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SIR576DP-T1-BE3

Name: Vishay SIR576DP-T1-BE3
Brand: Vishay / Siliconix
SKU: 78-SIR576DP-T1-BE3
Price: 1.9 EUR
Availability: InStock

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See Product Specifications

Mouser No:

78-SIR576DP-T1-BE3

Mfr. No:

SIR576DP-T1-BE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 16 m 10V

Datasheet:

SIR576DP-T1-BE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay / Siliconix SIR576DP-T1-BE3

In Stock: 5.734

Stock:: 5.734 Can Dispatch Immediately

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Factory Lead Time:: 56 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,90 €	1,90 €
	1,22 €	12,20 €
	0,824 €	82,40 €
	0,655 €	327,50 €
	0,58 €	580,00 €
Full Reel (Order in multiples of 3000)
	0,549 €	1.647,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	42.2 A
Rds On - Drain-Source Resistance:	16 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	71.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	16 ns
Forward Transconductance - Min:	32 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	SiR576DP
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	18 ns

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Datasheet

SIR576DP-T1-BE3 Datasheet

PCN

Product Change Notification 2024-11-22 (PDF)

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Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET^® Gen V Power MOSFETs increase power conversion efficiency with a very low R_DS x Q_g figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK^® 1212-8SH or PowerPAK SO-8 single package.