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SIHA11N80E-GE3

Name: Vishay SIHA11N80E-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHA11N80E-GE3
Price: 4.15 EUR
Availability: InStock

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Mouser No:

78-SIHA11N80E-GE3

Mfr. No:

SIHA11N80E-GE3

Mfr.:

Vishay / Siliconix

Datasheet:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	380 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	34 W
Channel Mode:	Enhancement
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	18 ns
Forward Transconductance - Min:	4.5 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	SIHA E
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	2 g