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SQJ168ELP-T1_GE3

Name: Vishay SQJ168ELP-T1_GE3
Brand: Vishay Semiconductors
SKU: 78-SQJ168ELP-T1_GE3
Price: 1.09 EUR
Availability: InStock

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See Product Specifications

Mouser No:

78-SQJ168ELP-T1_GE3

Mfr. No:

SQJ168ELP-T1_GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET

Datasheet:

SQJ168ELP-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SQJ168ELP-T1_GE3

In Stock: 5.950

Stock:: 5.950 Can Dispatch Immediately

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Factory Lead Time:: 7 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,09 €	1,09 €
	0,685 €	6,85 €
	0,452 €	45,20 €
	0,353 €	176,50 €
	0,32 €	320,00 €
Full Reel (Order in multiples of 3000)
	0,278 €	834,00 €
	0,274 €	1.644,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	32 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	29.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	1 ns
Forward Transconductance - Min:	30 S
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	SQJ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	7 ns

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Datasheet

SQJ168ELP-T1_GE3 Datasheet

Technical Resources

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SQJ Automotive MOSFETs

Vishay / Siliconix SQJ Automotive MOSFETs are TrenchFET^®Gen IV N-Channel 40V_DS power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% R_g and Unclamped Inductive Switching (UIS) tested with less-than 1 Q_gd/Q_gs ratio that optimizes the switching characteristics. The Vishay / Siliconix SQJ Automotive MOSFETs offer very low R_DS(on) and operate within the -55°C to 175°C temperature range. These automotive-grade MOSFETs are available in a PowerPAK^® SO-8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives and actuators, and battery management.