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SI7956DP-T1-E3

Name: Vishay SI7956DP-T1-E3
Brand: Vishay Semiconductors
SKU: 781-SI7956DP-T1-E3
Price: 3.83 EUR
Availability: InStock

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Mouser No:

781-SI7956DP-T1-E3

Mfr. No:

SI7956DP-T1-E3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 150V Vds 20V Vgs PowerPAK SO-8

Datasheet:

SI7956DP-T1-E3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SI7956DP-T1-E3

In Stock: 283

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,83 €	3,83 €
	2,52 €	25,20 €
	1,78 €	178,00 €
	1,51 €	755,00 €
Full Reel (Order in multiples of 3000)
	1,42 €	4.260,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	4.1 A
Rds On - Drain-Source Resistance:	105 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	18 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	13 ns
Series:	SI7
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	SI7956DP-E3
Unit Weight:	506,600 mg

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Datasheet

SI7956DP-T1-E3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Si79 MOSFETs

Vishay Si79 MOSFETs feature advanced ThunderFET® technology to balance parameters like R_DS(on), Q_g, Q_sw, and Q_oss. These Vishay MOSFETs are rigorously tested, ensuring 100% reliability through extensive Rg and UIS testing. The devices' design is PWM optimized, facilitating fast switching performance. Encased in a Low Thermal Resistance PowerPAK® package, the Si79 MOSFETS demonstrate efficient heat dissipation. Additionally, these MOSFETs feature a high threshold voltage at high temperatures, enhancing stability. Including a dual MOSFET configuration contributes to space savings, making the Si79 an ideal choice for applications where size is critical.