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IRLR014TRPBF

Name: Vishay IRLR014TRPBF
Brand: Vishay Semiconductors
SKU: 844-IRLR014TRPBF
Price: 1.85 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

844-IRLR014TRPBF

Mfr. No:

IRLR014TRPBF

Mfr.:

Vishay Semiconductors

Description:

MOSFETs RECOMMENDED ALT IRLR

Datasheet:

IRLR014TRPBF Datasheet

ECAD Model:

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More Information

Learn more about Vishay Semiconductors IRLR014TRPBF

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 9.132

Expected 1/11/2027
Factory Lead Time:: 80

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,85 €	1,85 €
	1,19 €	11,90 €
	0,798 €	79,80 €
	0,634 €	317,00 €
	0,581 €	581,00 €
Full Reel (Order in multiples of 2000)
	0,537 €	1.074,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	7.7 A
Rds On - Drain-Source Resistance:	200 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	8.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Product Type:	MOSFETs
Factory Pack Quantity:	2000
Subcategory:	Transistors
Unit Weight:	330 mg

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Attributes selected: 0

                        
Qualification of ASE as an Additional Assembly Site of DPAK Commercial 
Power Mosfets 

DESCRIPTION OF CHANGE: Vishay Siliconix would like to announce the 
approval of Advanced Semiconductor Engineering (ASE) plant located in 
Weihai, China as an additional assembly facility for DPAK, MOSFET 
devices. 

Please contact a Mouser Technical Sales Representative for further
information.

5-0614-3

Filter Document:

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

IRL Power MOSFETs

Vishay IRL Power MOSFETs offer an optimal balance of fast switching, rugged design, low on-resistance, and cost efficiency. The Vishay IRL MOSFETs are available in SOT-223 and DPAK packages. These MOSFETs support surface mounting using vapor phase, infrared, or wave soldering techniques. The SOT-223 package features an enlarged tab for improved thermal performance, enabling power dissipation exceeding 1.25W, while the DPAK package allows for power dissipation up to 1.5W in typical applications. The IRLU and SiHLU series also provide a straight-lead option for through-hole mounting.