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IRF610SPBF

Name: Vishay IRF610SPBF
Brand: Vishay Semiconductors
SKU: 844-IRF610SPBF
Price: 2.26 EUR
Availability: InStock

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Mouser No:

844-IRF610SPBF

Mfr. No:

IRF610SPBF

Mfr.:

Vishay Semiconductors

Datasheet:

ECAD Model:

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Stock:: 3.562 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	3.3 A
Rds On - Drain-Source Resistance:	1.5 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	8.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	36 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8.9 ns
Forward Transconductance - Min:	0.8 S
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	IRF
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	8.2 ns
Unit Weight:	4 g