VFT2080C-E3/4W

Vishay General Semiconductor
625-VFT2080C-E3/4W
VFT2080C-E3/4W

Mfr.:

Description:
Schottky Diodes & Rectifiers 20A,80V,Trench

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In Stock: 945

Stock:
945 Can Dispatch Immediately
Quantities greater than 945 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
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Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,69 € 1,69 €
1,08 € 10,80 €
0,748 € 74,80 €
0,635 € 317,50 €
0,529 € 529,00 €
0,481 € 962,00 €
0,47 € 2.350,00 €
0,463 € 4.630,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Schottky Diodes & Rectifiers
RoHS:  
REACH - SVHC:
Schottky Rectifiers
Through Hole
TO-220FP-3
Dual Anode Common Cathode
Si
20 A
80 V
670 mV
100 A
20 uA
- 55 C
+ 150 C
VxT2080x
Tube
Brand: Vishay General Semiconductor
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Tradename: TMBS
Unit Weight: 1,720 g
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Attributes selected: 0

TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

80V/100V TMBS® Trench MOS Schottky Rectifiers

Vishay General Semiconductor 80V/100V TMBS® Trench MOS Schottky Rectifiers feature high current density (2A and 3A, respectively) in a low-profile surface-mount package. Vishay Semiconductors VxT1080, VxT2080, and VxT3080 80V TMBS Trench MOS Schottky Rectifiers feature a wide range of current ratings from 10A to 30A.

eSMP® SMPA Schottky Rectifiers

Vishay General Semiconductors eSMP® SMPA Schottky Rectifiers are a patented Trench MOS Barrier Schottky (TMBS®) rectifiers that are available with seven voltage ratings from 45V to 200V and several different package options to serve a wide range of system requirements. TMBS offers several advantages over planar Schottky rectifiers. As operating voltage moves to 45V and above, planar Schottky rectifiers tend to lose their advantage of fast switching speeds and low forward voltage drop to a substantial degree. The Vishay General Semiconductors patented TMBS structure addresses this issue by diminishing minority carrier injections to the drift region, thus minimizing stored charges and improving switching speeds.