VF30120S-E3/4W

Vishay Semiconductors
625-VF30120S-E3
VF30120S-E3/4W

Mfr.:

Description:
Schottky Diodes & Rectifiers 30 Amp 120 Volt Single TrenchMOS

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,654 € 654,00 €
0,643 € 1.286,00 €
0,624 € 3.120,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Schottky Diodes & Rectifiers
RoHS:  
REACH - SVHC:
Schottky Rectifiers
Through Hole
TO-220FP-3
Single Dual Anode
Si
30 A
120 V
1.1 V
300 A
500 uA
- 40 C
+ 150 C
Vx30xx0x
Tube
Brand: Vishay Semiconductors
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Tradename: TMBS
Unit Weight: 1,720 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Trench MOS Barrier Schottky Rectifier

The Vishay Semiconductors V, VB, and VF Trench MOS Barrier Schottky Rectifier series delivers extremely low forward voltage drop and superior switching performance for improved efficiency of switchmode power supplies (SMPS).The low VF reduces power loss and improves efficiency of the OR-ing diode in the high-voltage output of redundant SMPS for servers, industrial computers, and telecommunication systems. The Vishay Semiconductors device comes in various packages and is optimized for 40W to 800W high-frequency SMPS applications. The Trench MOS Barrier Schottky Rectifier can be used as an alternative to synchronous rectification solutions while matching their efficiency and thermal performance.