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6DFN13A-M3/I

Name: Vishay 6DFN13A-M3/I
Brand: Vishay General Semiconductor
SKU: 78-6DFN13A-M3/I
Price: 0.33 EUR
Availability: InStock

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Mouser No:

78-6DFN13A-M3/I

Mfr. No:

6DFN13A-M3/I

Mfr.:

Vishay General Semiconductor

Description:

ESD Protection Diodes / TVS Diodes 600W,13V 5%, DFN3820A TVS

Datasheet:

6DFN13A-M3/I Datasheet

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Learn more about Vishay General Semiconductor 6DFN13A-M3/I

In Stock: 24.070

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,335 €	0,34 €
	0,228 €	2,28 €
	0,154 €	15,40 €
	0,12 €	60,00 €
	0,089 €	89,00 €
Full Reel (Order in multiples of 14000)
	0,085 €	1.190,00 €
	0,075 €	2.100,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	ESD Protection Diodes / TVS Diodes
RoHS:
REACH - SVHC:
Polarity:	Unidirectional
Number of Channels:	1 Channel
Termination Style:	SMD/SMT
Clamping Voltage:	18.2 V
Breakdown Voltage:	12.4 V
Package/Case:	DFN-3820A-2
Ipp - Peak Pulse Current:	33 A
Pppm - Peak Pulse Power Dissipation:	600 W
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay General Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product:	TVS Diodes
Factory Pack Quantity:	14000
Subcategory:	ESD Protection Diodes / TVS Diodes

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Datasheet

6DFN13A-M3/I Datasheet

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TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

6DFN12A to 6DFN51A TRANSZORB® SMD TVS Diodes

Vishay 6DFN12A to 6DFN51A TRANSZORB® SMD Transient Voltage Suppressor (TVS) Diodes feature a junction passivation optimized design with passivated anisotropic rectifier technology. These low-profile (0.88mm typical) diodes offer excellent clamping voltage capability (16.7V to 70.1V maximum) with 600W peak pulse power in a wide -65°C to +175°C operating junction temperature range. The components are compatible with the SMP (DO-220AA) package case outline. The Vishay 6DFN12A to 6DFN51A TRANSZORB® TVS Diodes protect sensitive electronics against voltage transients induced by inductive load switching and lightning on ICs, MOSFETs, signal lines of consumer sensor units, computers, industrial, medical, and telecommunications.