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TW045Z120C,S1F

Name: Toshiba TW045Z120C,S1F
Brand: Toshiba
SKU: 757-TW045Z120CS1F
Price: 22.71 EUR
Availability: InStock

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Mouser No:

757-TW045Z120CS1F

Mfr. No:

TW045Z120C,S1F

Mfr.:

Toshiba

Description:

SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm

Datasheet:

TW045Z120C,S1F Datasheet (PDF)

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In Stock: 50

Stock:: 50 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	22,71 €	22,71 €
	16,44 €	164,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	57 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	182 W
Channel Mode:	Enhancement
Brand:	Toshiba
Configuration:	Single
Fall Time:	18 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	13 ns
Series:	3rd Generation
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	27 ns

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Datasheet

TW045Z120C,S1F Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

3rd Generation Silicon Carbide MOSFETs

Toshiba 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs contribute to reducing power consumption and improving power density. This is due to SiC technology which allows devices to deliver higher voltages, faster switching, and lower On-resistance. Toshiba’s third generation chip design offers enhanced reliability in addition to input capacitance (C_ISS) of 4850pF (typical), a low gate-input charge (Q_g) of 128nC (typical), and a drain-to-source On-resistance (R_DS(ON)) of just 15mΩ or 30mΩ (typical).