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TPN2R903PL,L1Q

Name: Toshiba TPN2R903PL,L1Q
Brand: Toshiba
SKU: 757-TPN2R903PLL1Q
Price: 1.11 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TPN2R903PLL1Q

Mfr. No:

TPN2R903PL,L1Q

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR

Datasheet:

TPN2R903PL,L1Q Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TPN2R903PL,L1Q

In Stock: 6.308

Stock:: 6.308

Can Dispatch Immediately

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On Order:: 5.000

Expected 6/8/2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,11 €	1,11 €
	0,698 €	6,98 €
	0,46 €	46,00 €
	0,355 €	177,50 €
	0,297 €	297,00 €
	0,292 €	730,00 €
Full Reel (Order in multiples of 5000)
	0,266 €	1.330,00 €
	0,257 €	2.570,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	122 A
Rds On - Drain-Source Resistance:	2.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	26 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Tradename:	U-MOSIX-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	8.2 ns
Product Type:	MOSFETs
Rise Time:	4.7 ns
Series:	TPN2R903PL
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	20 mg

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Datasheet

TPN2R903PL,L1Q Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.