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TPH3R506PL,LQ

Name: Toshiba TPH3R506PL,LQ
Brand: Toshiba
SKU: 757-TPH3R506PLLQ
Price: 0.54 EUR
Availability: OutOfStock

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Mouser No:

757-TPH3R506PLLQ

Mfr. No:

TPH3R506PL,LQ

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR

Datasheet:

TPH3R506PL,LQ Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 18 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	0,547 €	1.641,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	135 A
Rds On - Drain-Source Resistance:	3.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	55 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	116 W
Channel Mode:	Enhancement
Tradename:	U-MOSIX-H
Packaging:	Reel
Brand:	Toshiba
Configuration:	Single
Fall Time:	7.2 ns
Product Type:	MOSFETs
Rise Time:	5.4 ns
Series:	TPH3R506PL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	8.8 ns
Unit Weight:	83 mg

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Datasheet

TPH3R506PL,LQ Datasheet (PDF)

Application Notes

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Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.