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TPC8129,LQ(S

Name: Toshiba TPC8129,LQ(S
Brand: Toshiba
SKU: 757-TPC8129LQS
Price: 0.86 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TPC8129LQS

Mfr. No:

TPC8129,LQ(S

Mfr.:

Toshiba

Description:

MOSFETs N-Ch -30V FET 1650pF -9A 1.9W

Datasheet:

TPC8129,LQ(S Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TPC8129,LQ(S

In Stock: 3.644

Stock:: 3.644 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,869 €	0,87 €
	0,544 €	5,44 €
	0,354 €	35,40 €
	0,273 €	136,50 €
	0,246 €	246,00 €
Full Reel (Order in multiples of 2500)
	0,193 €	482,50 €
	0,184 €	920,00 €
	0,183 €	1.830,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	9 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	39 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.9 W
Channel Mode:	Enhancement
Tradename:	U-MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Series:	TPC8129
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Unit Weight:	83 mg

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Datasheet

TPC8129,LQ(S Datasheet (PDF)

Application Notes

Models

Simulation Model

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.