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TK6A80E,S4X

Name: Toshiba TK6A80E,S4X
Brand: Toshiba
SKU: 757-TK6A80ES4X
Price: 2.82 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK6A80ES4X

Mfr. No:

TK6A80E,S4X

Mfr.:

Toshiba

Description:

MOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS

Datasheet:

TK6A80E,S4X Datasheet (PDF)

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Learn more about Toshiba TK6A80E,S4X

In Stock: 159

Stock:: 159 Can Dispatch Immediately

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,82 €	2,82 €
	1,42 €	14,20 €
	1,31 €	131,00 €
	1,02 €	510,00 €
	0,937 €	937,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	1.35 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	32 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Tradename:	MOSVIII
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	15 ns
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	TK6A80E
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	55 ns
Unit Weight:	2 g

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Datasheet

TK6A80E,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low R_DS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.