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TK3R2E06PL,S1X

Name: Toshiba TK3R2E06PL,S1X
Brand: Toshiba
SKU: 757-TK3R2E06PLS1X
Price: 2.43 EUR
Availability: InStock

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Mouser No:

757-TK3R2E06PLS1X

Mfr. No:

TK3R2E06PL,S1X

Mfr.:

Toshiba

Description:

MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220AB(OS) PD=168W F=1MHZ

Datasheet:

TK3R2E06PL,S1X Datasheet (PDF)

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Learn more about Toshiba TK3R2E06PL,S1X

In Stock: 960

Stock:: 960 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,43 €	2,43 €
	1,21 €	12,10 €
	1,19 €	119,00 €
	0,998 €	499,00 €
	0,869 €	869,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	160 A
Rds On - Drain-Source Resistance:	3.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	71 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	168 W
Channel Mode:	Enhancement
Tradename:	U-MOSIX-H
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	TK3R2E06PL
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	2 g

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Datasheet

TK3R2E06PL,S1X Datasheet (PDF)

Application Notes

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Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.