TK35N65W,S1F

Toshiba
757-TK35N65WS1F
TK35N65W,S1F

Mfr.:

Description:
MOSFETs MOSFET NChannel 068ohm DTMOS

ECAD Model:
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In Stock: 20

Stock:
20 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,93 € 8,93 €
6,24 € 62,40 €
4,41 € 529,20 €
4,38 € 2.233,80 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
35 A
68 mOhms
- 30 V, 30 V
3.5 V
100 nC
- 55 C
+ 150 C
270 W
Enhancement
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK35N65W
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 6 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.