TK17E65W,S1X

Toshiba
757-TK17E65WS1X
TK17E65W,S1X

Mfr.:

Description:
MOSFETs Power MOSFET N-Channel

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,11 € 4,11 €
2,13 € 21,30 €
1,90 € 190,00 €
1,60 € 800,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
17.3 A
170 mOhms
- 30 V, 30 V
2.5 V
45 nC
- 55 C
+ 150 C
165 W
Enhancement
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 6 ns
Product Type: MOSFETs
Rise Time: 15 ns
Series: TK17E65W
Factory Pack Quantity: 50
Subcategory: Transistors
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 50 ns
Unit Weight: 2 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.