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TJ90S04M3L,LQ

Name: Toshiba TJ90S04M3L,LQ
Brand: Toshiba
SKU: 757-TJ90S04M3LLQ
Price: 2.53 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TJ90S04M3LLQ

Mfr. No:

TJ90S04M3L,LQ

Mfr.:

Toshiba

Description:

MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK+ PD=180W F=1MHZ

Datasheet:

TJ90S04M3L,LQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TJ90S04M3L,LQ

In Stock: 7.044

Stock:: 7.044 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,53 €	2,53 €
	1,64 €	16,40 €
	1,14 €	114,00 €
	1,01 €	505,00 €
	0,963 €	963,00 €
Full Reel (Order in multiples of 2000)
	0,877 €	1.754,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	4.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	172 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	180 W
Channel Mode:	Enhancement
Tradename:	U-MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	426 ns
Product Type:	MOSFETs
Rise Time:	76 ns
Series:	TJ20A10M3
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	1305 ns
Typical Turn-On Delay Time:	94 ns
Unit Weight:	360 mg

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Datasheet

TJ90S04M3L,LQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.