TBD62785AFWG,EL

Toshiba
757-TBD62785AFWGEHZ
TBD62785AFWG,EL

Mfr.:

Description:
Gate Drivers DMOS Transistor Array 8-CH 50V -0.5A

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 1.409

Stock:
1.409 Can Dispatch Immediately
Factory Lead Time:
34 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,11 € 3,11 €
2,04 € 20,40 €
2,01 € 50,25 €
1,43 € 143,00 €
1,25 € 625,00 €
Full Reel (Order in multiples of 1000)
1,06 € 1.060,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: Gate Drivers
RoHS:  
Driver ICs - Various
Low-Side
SMD/SMT
PSOP-18
8 Driver
8 Output
500 mA
4.5 V
50 V
Inverting
- 40 C
+ 85 C
Reel
Cut Tape
Brand: Toshiba
Output Voltage: 50 V
Pd - Power Dissipation: 1.31 W
Product Type: Gate Drivers
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 480 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8542399000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

TBD62x DMOS FET Transistor Arrays

Toshiba TBD62x DMOS FET Transistor Arrays are equipped with 7-channel and 8-channel common source power DMOS arrays. The Doubled-Diffused MOSFET (DMOS FET) type sink-output driver allows high voltage and consumes less power due to reduced on-resistance of the output stage. These TBD62x transistor arrays feature 50V high output voltage, -0.5A high output current, and high efficiency. The transistor arrays operate from a -40°C to +85°C temperature range and support a -55°C to +150°C storage temperature range. These TBD62x transistor arrays are available in through-hole and surface-mount packages.