SSM6N55NU,LF

Toshiba
757-SSM6N55NULF
SSM6N55NU,LF

Mfr.:

Description:
MOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD

ECAD Model:
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In Stock: 9.584

Stock:
9.584 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,542 € 0,54 €
0,333 € 3,33 €
0,212 € 21,20 €
0,161 € 80,50 €
0,144 € 144,00 €
Full Reel (Order in multiples of 3000)
0,122 € 366,00 €
0,115 € 690,00 €
0,10 € 900,00 €
0,094 € 2.256,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
N-Channel
2 Channel
U-MOSVII-H
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Dual
Product Type: MOSFETs
Series: SSM6N55
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Unit Weight: 8,500 mg
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541219000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.