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SSM6N55NU,LF

Name: Toshiba SSM6N55NU,LF
Brand: Toshiba
SKU: 757-SSM6N55NULF
Price: 0.37 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6N55NULF

Mfr. No:

SSM6N55NU,LF

Mfr.:

Toshiba

Description:

MOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD

Datasheet:

SSM6N55NU,LF Datasheet (PDF)

ECAD Model:

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In Stock: 9.706

Stock:: 9.706 Can Dispatch Immediately

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,37 €	0,37 €
	0,237 €	2,37 €
	0,163 €	16,30 €
	0,13 €	65,00 €
	0,116 €	116,00 €
Full Reel (Order in multiples of 3000)
	0,098 €	294,00 €
	0,094 €	564,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Tradename:	U-MOSVII-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Product Type:	MOSFETs
Series:	SSM6N55
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Unit Weight:	8,500 mg

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Datasheet

SSM6N55NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541219000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.