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SSM5N16FU,LF

Name: Toshiba SSM5N16FU,LF
Brand: Toshiba
SKU: 757-SSM5N16FULF
Price: 0.31 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-SSM5N16FULF

Mfr. No:

SSM5N16FU,LF

Mfr.:

Toshiba

Description:

MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V

Datasheet:

SSM5N16FU,LF Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,318 €	0,32 €
	0,196 €	1,96 €
	0,123 €	12,30 €
	0,092 €	46,00 €
	0,081 €	81,00 €
Full Reel (Order in multiples of 3000)
	0,065 €	195,00 €
	0,059 €	354,00 €
	0,05 €	450,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-353-5
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	100 mA
Rds On - Drain-Source Resistance:	3 Ohms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	200 mW
Channel Mode:	Enhancement
Tradename:	MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Forward Transconductance - Min:	40 mS
Product Type:	MOSFETs
Series:	SSM5N16FU
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	125 ns
Typical Turn-On Delay Time:	70 ns
Unit Weight:	6 mg

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Datasheet

SSM5N16FU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

π-MOS VI MOSFETs

Toshiba π-MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba π-MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.