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SSM3K56CT,L3F

Name: Toshiba SSM3K56CT,L3F
Brand: Toshiba
SKU: 757-SSM3K56CTL3F
Price: 0.34 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM3K56CTL3F

Mfr. No:

SSM3K56CT,L3F

Mfr.:

Toshiba

Description:

MOSFETs Small Low ON Resistane MOSFETs

Datasheet:

SSM3K56CT,L3F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM3K56CT,L3F

In Stock: 2.770

Stock:: 2.770

Can Dispatch Immediately

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On Order:: 10.000

Expected 8/14/2026

10.000

Expected 9/28/2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,344 €	0,34 €
	0,213 €	2,13 €
	0,134 €	13,40 €
	0,10 €	50,00 €
	0,079 €	79,00 €
Full Reel (Order in multiples of 10000)
	0,06 €	600,00 €
	0,051 €	1.020,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-883-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	800 mA
Rds On - Drain-Source Resistance:	235 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	U-MOSVII-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	8.5 ns
Typical Turn-On Delay Time:	5.5 ns
Unit Weight:	0,750 mg

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Filter Document:

Datasheet

SSM3K56CT,L3F Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

Compliance Codes

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.