SSM3K388R,LF

Toshiba
757-SSM3K388RLF
SSM3K388R,LF

Mfr.:

Description:
MOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, SOT-23F

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2.072

Stock:
2.072 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,387 € 0,39 €
0,267 € 2,67 €
0,169 € 16,90 €
0,107 € 53,50 €
0,095 € 95,00 €
Full Reel (Order in multiples of 3000)
0,081 € 243,00 €
0,069 € 414,00 €
0,061 € 549,00 €
0,055 € 1.320,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-23F-3
N-Channel
1 Channel
60 V
2 A
87 mOhms
20 V
2.1 V
2.66 nC
+ 150 C
1.8 W
Enhancement
Reel
Cut Tape
Brand: Toshiba
Configuration: Single
Fall Time: 154 ns
Product Type: MOSFETs
Rise Time: 40 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 564 ns
Typical Turn-On Delay Time: 50 ns
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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.