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SSM3K09FU,LF

Name: Toshiba SSM3K09FU,LF
Brand: Toshiba
SKU: 757-SSM3K09FULF
Price: 0.39 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-SSM3K09FULF

Mfr. No:

SSM3K09FU,LF

Mfr.:

Toshiba

Description:

MOSFETs Small-signal MOSFET ID 0.4A, VDSS 30V

Datasheet:

SSM3K09FU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM3K09FU,LF

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 5.086

Expected 6/12/2026

54.000

Expected 8/28/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,396 €	0,40 €
	0,243 €	2,43 €
	0,153 €	15,30 €
	0,114 €	57,00 €
	0,102 €	102,00 €
Full Reel (Order in multiples of 3000)
	0,085 €	255,00 €
	0,077 €	462,00 €
	0,065 €	585,00 €
	0,063 €	1.512,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-323
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	400 mA
Rds On - Drain-Source Resistance:	700 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 mW
Channel Mode:	Enhancement
Tradename:	MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	72 ns
Unit Weight:	6 mg

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Datasheet

SSM3K09FU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

Compliance Codes

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

SSM3 High Current MOSFETs

Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches.

π-MOS VI MOSFETs

Toshiba π-MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba π-MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.