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SSM3J331R,LF

Name: Toshiba SSM3J331R,LF
Brand: Toshiba
SKU: 757-SSM3J331RLF
Price: 0.31 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-SSM3J331RLF

Mfr. No:

SSM3J331R,LF

Mfr.:

Toshiba

Description:

MOSFETs P-Ch U-MOSVI FET ID -4A -20VDSS 630pF

Datasheet:

SSM3J331R,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM3J331R,LF

In Stock: 1.715

Stock:: 1.715

Can Dispatch Immediately

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On Order:: 21.000

Expected 4/10/2026
Factory Lead Time:: 6

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,318 €	0,32 €
	0,196 €	1,96 €
	0,123 €	12,30 €
	0,092 €	46,00 €
	0,081 €	81,00 €
Full Reel (Order in multiples of 3000)
	0,065 €	195,00 €
	0,059 €	354,00 €
	0,05 €	450,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	150 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	10.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Tradename:	U-MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Product Type:	MOSFETs
Series:	SSM3J331
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Unit Weight:	8 mg

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Datasheet

SSM3J331R,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.