SSM3J15FU,LF

Toshiba
757-SSM3J15FULF
SSM3J15FU,LF

Mfr.:

Description:
MOSFETs Small-signal MOSFET High Speed Switching

ECAD Model:
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In Stock: 8.998

Stock:
8.998
Can Dispatch Immediately
On Order:
18.000
Expected 6/26/2026
Factory Lead Time:
10
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,198 € 0,20 €
0,118 € 1,18 €
0,074 € 7,40 €
0,054 € 27,00 €
0,047 € 47,00 €
Full Reel (Order in multiples of 3000)
0,039 € 117,00 €
0,034 € 204,00 €
0,028 € 252,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-323-3
P-Channel
1 Channel
30 V
100 mA
12 Ohms
- 20 V, 20 V
1.1 V
- 55 C
+ 150 C
150 mW
Enhancement
AEC-Q101
MOSVI
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: SSM3J15
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 175 ns
Typical Turn-On Delay Time: 65 ns
Unit Weight: 6 mg
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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2

Compliance Codes
TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541299000
MXHTS:
8541210100
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Thailand
Country of Diffusion:
Japan
The country is subject to change at the time of shipment.

π-MOS VI MOSFETs

Toshiba π-MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba π-MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.