It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SSM3J133TU,LF

Name: Toshiba SSM3J133TU,LF
Brand: Toshiba
SKU: 757-SSM3J133TULF
Price: 0.5 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-SSM3J133TULF

Mfr. No:

SSM3J133TU,LF

Mfr.:

Toshiba

Description:

MOSFETs Small-signal MOSFET P-Channel

Datasheet:

SSM3J133TU,LF Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba SSM3J133TU,LF

In Stock: 2.356

Stock:: 2.356

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 6.000

Expected 2/23/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,507 €	0,51 €
	0,309 €	3,09 €
	0,197 €	19,70 €
	0,149 €	74,50 €
	0,132 €	132,00 €
Full Reel (Order in multiples of 3000)
	0,109 €	327,00 €
	0,10 €	600,00 €
	0,093 €	837,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UFM-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	5.5 A
Rds On - Drain-Source Resistance:	24.9 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	12.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Tradename:	U-MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Series:	SSM3J133TU
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	107 ns
Typical Turn-On Delay Time:	32 ns
Unit Weight:	6,600 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SSM3J133TU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541219000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.