SSM14N956L,EFF

Toshiba
757-SSM14N956LEFF
SSM14N956L,EFF

Mfr.:

Description:
MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm

ECAD Model:
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In Stock: 23.380

Stock:
23.380 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,26 € 1,26 €
0,877 € 8,77 €
0,616 € 61,60 €
0,526 € 263,00 €
0,517 € 517,00 €
0,499 € 1.247,50 €
0,492 € 2.460,00 €
Full Reel (Order in multiples of 10000)
0,492 € 4.920,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
N-Channel
2 Channel
1.35 mOhms
- 8 V, 8 V
76 nC
+ 150 C
1.33 W
Enhancement
Reel
Cut Tape
Brand: Toshiba
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Fall Time: 2.1 us
Product Type: MOSFETs
Rise Time: 1.3 us
Factory Pack Quantity: 10000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 3.8 us
Typical Turn-On Delay Time: 1 us
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SSM14N956L MOSFET

Toshiba SSM14N956L MOSFET features low source-source on-resistance and is RoHS compatible. The SSM14N956L MOSFET is halogen-free. This MOSFET provides 2.44W on the condition (t ≤ 10s) and operates at 150°C channel temperature and -55°C to 150°C storage temperature range. The RSS(ON) = 1.1mΩ (typ) (@VGS = 3.8V) and RSS(ON) = 1mΩ (typ) (@VGS = 4.5V) are the low source-source on-resistance. This SSM14N956L MOSFET is ideally used in battery protection circuits.