CUHS10F60,H3F

Toshiba
757-CUHS10F60H3F
CUHS10F60,H3F

Mfr.:

Description:
Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF

Datasheet:
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In Stock: 2.981

Stock:
2.981
Can Dispatch Immediately
On Order:
3.000
Expected 2/23/2026
Factory Lead Time:
14
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,31 € 0,31 €
0,192 € 1,92 €
0,121 € 12,10 €
0,09 € 45,00 €
0,079 € 79,00 €
Full Reel (Order in multiples of 3000)
0,059 € 177,00 €
0,054 € 324,00 €
0,049 € 441,00 €
0,048 € 1.152,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: Schottky Diodes & Rectifiers
RoHS:  
Single
Reel
Cut Tape
MouseReel
Brand: Toshiba
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 3000
Subcategory: Diodes & Rectifiers
Unit Weight: 5,400 mg
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Attributes selected: 0

TARIC:
8541100000
CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

CUHS10F60 Schottky Barrier Diode

Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to +150°C and a maximum junction temperature of +150°C. The Toshiba CUHS10F60 SBD also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.

Small Signal Schottky Barrier Diodes

Toshiba Small Signal Schottky Barrier Diodes come in a variety of packages, voltages, and current ratings to meet a variety of design requirements. Voltages range from 10V to 60V with current ratings from 0.05A to 2A. Toshiba Small Signal Schottky Barrier Diodes feature high-speed switching and a low leakage current.

CUHSx Schottky Barrier Diodes

Toshiba CUHSx Schottky Barrier Diodes (SBDs) are suitable for rectifying power supply circuits and protecting reverse currents. These diodes are high-speed switching devices that incorporate Si technology and use a US2H package to achieve low-thermal resistance. These SBDs offer a reverse leakage greater than other types of diodes making them more susceptible to thermal runaway under high-temperature and high-voltage conditions. To improve the efficiency of power supply use, these SBDs are required to have low forward voltage and low reverse current. The DC-DC boost converter ICs are used in voltage-boosting circuits for driving LCD backlight LEDs in portable devices like smartphones, tablets, and notebook PCs. In addition to the DC-DC converter circuits, Toshiba CUHSx Schottky Barrier Diodes are also used in applications such as motor driver circuits, MOSFET gate driver circuits, and freewheeling diodes.

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