UCC27210DR

Texas Instruments
595-UCC27210DR
UCC27210DR

Mfr.:

Description:
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27210D

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
2,58 € 2,58 €
1,93 € 19,30 €
1,76 € 44,00 €
1,58 € 158,00 €
1,50 € 375,00 €
Full Reel (Order in multiples of 2500)
1,26 € 3.150,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Tube
Availability:
In Stock
Price:
3,56 €
Min:
1

Similar Product

Texas Instruments UCC27210D
Texas Instruments
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27210DR

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SOIC-8
4 A
7.8 V
20 V
8 ns
7 ns
- 40 C
+ 140 C
UCC27210
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 76 mg
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Compliance Codes
TARIC:
8542399000
CNHTS:
8542319000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.