UCC27210DPRT

Texas Instruments
595-UCC27210DPRT
UCC27210DPRT

Mfr.:

Description:
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27210DPRR

ECAD Model:
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In Stock: 165

Stock:
165 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
3,67 € 3,67 €
2,79 € 27,90 €
2,56 € 64,00 €
2,31 € 231,00 €
Full Reel (Order in multiples of 250)
2,19 € 547,50 €
2,18 € 1.090,00 €
2,12 € 2.120,00 €
2,09 € 5.225,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
WSON-10
2 Driver
2 Output
4 A
8 V
17 V
7.2 ns
5.5 ns
- 40 C
+ 140 C
UCC27210
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 38,200 mg
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Attributes selected: 0

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Compliance Codes
TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.