UCC23313BDWYR

Texas Instruments
595-UCC23313BDWYR
UCC23313BDWYR

Mfr.:

Description:
Optically Isolated Gate Drivers 3.75kVrms 4A/5A sin gle-channel opto-com A 595-UCC23313BDWY

ECAD Model:
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In Stock: 1.778

Stock:
1.778 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 850)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,654 € 0,65 €
0,471 € 4,71 €
0,425 € 10,63 €
0,373 € 37,30 €
0,348 € 87,00 €
0,334 € 167,00 €
Full Reel (Order in multiples of 850)
0,322 € 273,70 €
0,309 € 1.050,60 €
0,293 € 2.241,45 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Optically Isolated Gate Drivers
RoHS:  
UCC23313
SMD/SMT
SOIC-6
- 40 C
+ 125 C
105 ns
28 ns
25 ns
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: MY
Country of Diffusion: DE
Country of Origin: MY
Moisture Sensitive: Yes
Number of Drivers: 1 Driver
Number of Outputs: 1 Output
Output Current: 5 A
Product: Isolated Gate Drivers
Product Type: Optically Isolated Gate Drivers
Factory Pack Quantity: 850
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 30 V
Supply Voltage - Min: 15 V
Technology: Si
Type: High-Side, Low-Side
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Attributes selected: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

UCC23313/UCC23313-Q1 Isolated Gate Drivers

Texas Instruments UCC23313/UCC23313-Q1 Isolated Gate Drivers are designed for IGBTs, MOSFETs, and SiC MOSFETs, with a 4.5A source, a 5.3A sink peak output current, and a 3.75kVRMS basic isolation rating. The UCC23313/UCC23313-Q1 has a high supply voltage range of 33V and allows the use of bipolar supplies to drive IGBTs and SiC power FETs effectively. The UCC23313/UCC23313-Q1 can drive low- and high-side power FETs.