LMG3425R050RQZT

Texas Instruments
595-LMG3425R050RQZT
LMG3425R050RQZT

Mfr.:

Description:
Gate Drivers 600-V 50-m? GaN FET with integrated driv

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In Stock: 247

Stock:
247 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 247 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
23,37 € 23,37 €
18,83 € 188,30 €
17,70 € 442,50 €
16,46 € 1.646,00 €
Full Reel (Order in multiples of 250)
14,74 € 3.685,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
REACH - SVHC:
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
VQFN-54
1 Driver
1 Output
7.5 V
18 V
Non-Inverting
2.5 ns
21 ns
- 40 C
+ 125 C
LMG3425R050
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
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Attributes selected: 0

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CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG342xR050 600V 50mΩ GaN FETs

Texas Instruments LMG342xR050 600V 50mΩ GaN FETs with integrated driver and protection enable designers to achieve new power density and efficiency levels in power electronics systems. The LMG342xR050 integrates a silicon driver that enables switching speeds up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.