LMG3422R030RQZR

Texas Instruments
595-LMG3422R030RQZR
LMG3422R030RQZR

Mfr.:

Description:
Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 2000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2000)
10,21 € 20.420,00 €

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Isolated Gate Drivers
Half-Bridge
SMD/SMT
VQFN-54
1 Driver
3 Output
1.2 A
7.5 V
18 V
Non-Inverting
4 ns
21 ns
- 40 C
+ 150 C
LMG3422R030
Reel
Brand: Texas Instruments
Development Kit: LMG342X-BB-EVM
Input Voltage - Max: 18 V
Input Voltage - Min: 0 V
Logic Type: CMOS
Maximum Turn-Off Delay Time: 65 ns
Maximum Turn-On Delay Time: 52 ns
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 30 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
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Attributes selected: 0

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USHTS:
8542390090
ECCN:
EAR99

LMG342xR030 GaN Field Effect Transistors (FETs)

Texas Instruments LMG342xR030 GaN Field Effect Transistors (FETs) come with an integrated driver and protection that enables designers to achieve new power density and efficiency levels in power electronics systems.